【物理格致论坛第43期】 Al-Based Front Contacts for HCPV Solar Cells

信息来源:88858cc永利官网学院办公室   点击次数:  发布时间:2018-06-25

一、题目:Al-Based Front Contacts for HCPV Solar Cells

二、主讲人:霍鹏云

三、时间:2018628日(星期四), 下午15:00

四、地点: 闻理园A4-218(四友之家)


内容摘要As the third generation PV technology, concentrator photovoltaics (CPV) is one of the most promising technologies to reduce the cost of solar electricity. One of the key design challenges for high efficiency concentrator solar cells is to minimize the impact of ohmic losses associated with the large current densities that these devices handle. Typically, the most critical component is that of the series resistance due to the front contact. In this work, a low cost high performance based on PdGe/TiPd/Al metal stacks is explored. The results show that a PdGe/TiPd/Al front contact reduces the series resistance and thus can improve the performance of solar cells at ultrahigh concentration levels.


主讲人简介: 霍鹏云,西班牙马德里理工大学光伏太阳能研究所,光伏太阳能Photovoltaic Solar Energy博士,主要从事第三代聚光光伏太阳能电池的相关研究,包括聚光光伏太阳能电池正表面电极的制备及其优化,多结太阳能电池的结构优化及表征,多结太阳能电池的减反射膜沉积等。已经在Semicond. Sci. Technol., J. Electron. Mater.等期刊上发表多篇SCI论文。


参考文献:

[1] I. Rey-Stolle, J. M. Olson, and C. Algora, "Concentrator Multijunction Solar Cells," in Handbook of Concentrator Photovoltaic Technology, C. Algora and I. Rey-Stolle, Eds.: John Wiley & Sons, Ltd, 2016, pp. 59-136.

[2] P. Huo, B. Galiana, and I. Rey-Stolle, "Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities," Semiconductor Science and Technology, vol. 32, no. 4, p. 045006, 2017.

[3] M. Ochoa, E. Barrigón, L. Barrutia, I. García, I. Rey-Stolle, and C. Algora, "Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)," Progress in Photovoltaics: Research and Applications, vol. 24, no. 10, pp. 1332-1345, 2016.

[4] P. Espinet-González et al., "Concentración fotovoltaica," Revista Española de Física, vol. 27, no. 2, pp. 35-37, 2013.

[5] P. Huo and I. Rey-Stolle, "Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices," Journal of Electronic Materials, vol. 45, no. 6, pp. 2769-2775, 2016.